IMANE Layaida
لعيايدة إيمان
imane.layaida@univ-msila.dz
657181980
- Departement of Physics
- Faculty of Sciences
- Grade PHd
About Me
Sciences de la Matière
Research Domains
Condensed matter physics
FilierePhysique
Location
Msila, Msila
Msila, ALGERIA
Code RFIDE- 1990-03-10 00:00:00
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IMANE Layaida birthday
- 2026-01-20
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2026-01-20
Effect of the addition of Sr(Sn0.25Ti0.75)O3 on the dielectric properties in NaNbO3
Lead-free perovskite ceramics Sr1-xNax(Sn0.25Ti0.75)1-xNbxO3 (0.6 ≤ x ≤ 0.9), denoted SNSTNₓ, were synthesized by the conventional solid-state route and sintered at 1350 °C. X-ray diffraction analysis confirms the formation of a single-phase perovskite structure with tetragonal symmetry (space group P4mm) for all compositions. Dielectric measurements performed as a function of temperature and frequency reveal two distinct electrical behaviors depending on composition. Samples with x ≥ 0.8 exhibit classical ferroelectric characteristics with a welldefined, frequency-independent Curie temperature, whereas compositions with x < 0.8 show relaxor-like behavior characterized by diffuse phase transitions and strong frequency dispersion of the dielectric permittivity. The relaxor nature is further supported by deviation from the Curie–Weiss law and a diffuseness parameter γ ≈ 1.7. Ferroelectric hysteresis measurements performed for x = 0.9 confirm ferroelectricity, with a remanent polarization of 0.0125 μF mm⁻2 and a coercive field of 5 V mm⁻1. The observed evolution of dielectric behavior is attributed to structural disorder induced by simultaneous A-site ( Sr2⁺/Na⁺) and B-site (Sn4⁺/Ti4⁺/Nb5⁺) substitutions, which modify lattice distortion and reduce the phase transition temperature. These results indicate that SNSTNₓ ceramics are promising lead-free materials for temperature-stable dielectric applications.
Citation
Imane Layaida , , (2026-01-20), Effect of the addition of Sr(Sn0.25Ti0.75)O3 on the dielectric properties in NaNbO3, Journal of Materials Science: Materials in Electronics, Vol:37, Issue:220, pages:8, Springer
- 2024-11-09
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2024-11-09
DFT analysis of the physical characteristics of lead-free halide double perovskites.
Lead-free halide double perovskite materials have recently attracted considerable interest from the scientific community due to their vast potential in optoelectronic applications without toxicity issues. In this research, the physical properties of double halide perovskites (DP) were theoretically analyzed using the full-potential linearized augmented plane wave (FPLAPW) approach within the framework of density functional theory (DFT). The generalized gradient approximation (GGA) was utilized to compute key physical properties. The stability of both perovskites was confirmed through volume optimization curves and corresponding formation energies. Furthermore, electronic properties were assessed, and the band gap was determined. The results reveal semiconducting behavior with a direct band gap of 2.6 eV, suggesting its potential for solar cell applications.
Citation
Imane Layaida , FADILA Mezrag , SABER SAAD ESSAOUD , NADIR Bouarissa , ,(2024-11-09), DFT analysis of the physical characteristics of lead-free halide double perovskites.,The 1st International Conference of Materials Engineering and Renewable Energy (I C M E R E 2024),University May 8, 1945 Guelma Algeria Faculty of Science and Technology Department of Mechanical Engineering
- 2024-11-06
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2024-11-06
Double-Perovskite Halide Semiconductors for Photovoltaic Use.
Lead-free halide double perovskites have recently garnered significant interest for their promising optoelectronic properties and non-toxic nature. This study theoretically explored their physical properties using the full-potential linearized augmented plane wave (FPLAPW) method within the density functional theory (DFT) framework. The generalized gradient approximation (GGA) was applied to compute key physical characteristics. Stability was confirmed through volume optimization and formation energy calculations. An analysis of the electronic properties revealed a direct band gap of 2.6 eV, highlighting their semiconducting behavior and strong potential for solar cell applications.
Citation
Imane Layaida , ,(2024-11-06), Double-Perovskite Halide Semiconductors for Photovoltaic Use.,The First National Conference on Mechanical Engineering,Constantine 1- Frères Mentouri University ,Institute of Sciences and Applied Techniques_Department of Mechanics / Department of Electromechanics
- 2024-11-06
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2024-11-06
Double-Perovskite Halide Semiconductors for Photovoltaic Use.
Lead-free halide double perovskites have recently drawn significant interest for their promising optoelectronic properties and non-toxic nature. This study conducted a theoretical investigation of their physical properties using the full-potential linearized augmented plane wave (FPLAPW) method within the density functional theory (DFT) framework. The generalized gradient approximation (GGA) was employed to compute essential physical attributes. Stability was confirmed through volume optimization and formation energy calculations. The analysis of electronic properties revealed a direct band gap of 2.6 eV, suggesting semiconducting behavior and strong potential for solar cell applications. Keywords: Double halide perovskites; structural properties; electronic properties.
Citation
FADILA Mezrag , Imane Layaida , ,(2024-11-06), Double-Perovskite Halide Semiconductors for Photovoltaic Use.,The First National Conference on Mechanical Engineering,Univ: Constantine 1- Frères Mentouri University ,Institute of Sciences and Applied Techniques_Department of Mechanics / Department of Electromechanics
- 2024-10-11
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2024-10-11
Study of the structural and electronic properties of double perovskites for energy applications
The potential of halide perovskites has transformed the field of optoelectronics and energy conversion. In this study, the physical properties of double halide perovskites (DP) were investigated theoretically using the full-potential linearized augmented plane wave (FPLAPW) method within the framework of DFT. The generalized gradient approximation (GGA) was employed to calculate relevant physical characteristics. Stability for both perovskites was verified through volume optimization curves and corresponding formation energies. Additionally, electronic properties were examined, and band-gap were calculated. The findings indicate a semiconducting behavior with a direct band-gap of 2.6 eV, highlighting its potential for solar cell applications.
Citation
Imane Layaida , FADILA Mezrag , SABER SAAD ESSAOUD , NADIR Bouarissa , ,(2024-10-11), Study of the structural and electronic properties of double perovskites for energy applications,JSI'2024 - International Conference on Engineering Sciences 11ème Édition des Journées des Sciences de L’Ingénieur,University of Sfax, National School of Engineers of Sfax (ENIS), Tunisia.