FADILA Mezrag

Mezrag Fadila , tayoub imane

Design and Development of a Game-Based Application toEnhance English Pronunciation among Primary School Pupils

Yahia Fatima Zahra

Étude sur les alliages ternaires semiconducteurs: Masses effectives et distributions de charges.

FERAHTIA Ameur

Calculs pseudopotentiel de l’indice de réfraction et les constantes diélectriques des alliages ternaires semiconducteurs ZnxCd1-xS

Rahmouni Ameur

Etude des propriétés électroniques et élastiques des alliages ternaires semiconducteurs

Hocini manel

Effet du confinement quantique sur les propriétés électroniques et optiques des matériaux semiconducteurs nanostructurés II-VI

Zakarya, Bouguerra

Effets du confinement quantique sur les propriétés physiques des points quantiques sphériques semi-conducteurs III-V

HENNI, DJAHIDA

Les constantes élastiques et les propriétés mécaniques liées des alliages ternaires semiconducteurs CdSXTe1-X

Baghdadi Wahiba

Structure de bandes électroniques et les propriétés dérivées des quasi-binaires (InSb)1-x(CdTe)x

Abstract: In this research, we examine the optical and dielectric characteristics of ZnxCd1-xS, a ternary alloy system with a zinc-blende crystal structure. Our analysis employs a pseudopotential model based on the virtual crystal approximation, which accounts for the effects of compositional disorder. Through our calculations, we investigate various aspects of the refractive index and determine the most suitable model. Additionally, we determine the high-frequency and static dielectric constants for the materials studied. Crucially, we explore the band gap energy of ZnxCd1-xS, which is a fundamental parameter influencing its optical and electronic properties. The ability to tune the band gap energy through compositional variation makes this alloy system particularly attractive for diverse optoelectronic applications, including solar cells, light-emitting diodes, and photodetectors. Our findings show good agreement with previously published results in the literature. These results provide valuable insights for the application of this data in optoelectronics and offer useful information for further research in this field, particularly in the context of band gap engineering for specific device requirements.

Citation

FADILA Mezrag , Bureau de la stratégie de numérisation , ,(2025-11-04), Tailoring Optoelectronic Characteristics of ZnxCd1-xS Alloys through Band Gap Modulation,CMEE'2025,UNIVERSITE BATNA2

In the zinc-blende phase, the impact of quantum confinement on the band gap energies and refractive index of spherical semiconductor nanostructured InAs has been examined. Utilizing a pseudopotential approach, this study emphasizes the connection between the electronic and optical properties and the size of quantum dots. The results indicate that quantum confinement results in a significantly larger fundamental energy gap, whereas the refractive index decreases notably. This study underscores the influence of quantum confinement on the electronic properties of semiconductor quantum dots and their potential for various technological applications.

Citation

FADILA Mezrag , ,(2025-10-21), Band gap energies and optical properties in nanostructured semiconductor InAs: The Effect of Quantum Confinement,GCAITMD'25 M'sila,Msila University

This study examines the band gap energies of zinc-blende GaxIn1-xAsyP1-y quaternary alloys that are lattice-matched to InP and GaAs substrates. Utilizing theoretical modeling based on the pseudopotential approach under the virtual crystal approximation, this research explores the compositional dependence of the band gap across the full range of x and y values that maintain lattice matching. Our findings indicate that by varying the Gallium concentration, GaxIn1-xAsyP1-y exhibits a direct band-gap semiconductor for all possible values of x and y (0 ≤ x ≤ 0.47, 0 ≤ y ≤ and (0.52 ≤ x ≤ 1, 0 ≤ y ≤ 1) lattice-matched to InP and GaAs, respectively. This work provides valuable data for optimizing GaInAsP-based heterostructures for applications in lasers, photodetectors, and multijunction solar cells.

Citation

FADILA Mezrag , ,(2025-05-06), Band Gap Energies of lattice matched GaxIn1-xAsyP1-y quaternary alloys to InP and GaAs substrates,The First National Conference on Renewable Energies and Advanced Electrical Engineering (NC-REAEE'25) NC-REAEE'25,Msila University

Lead-free halide double perovskite materials have recently attracted considerable interest from the scientific community due to their vast potential in optoelectronic applications without toxicity issues. In this research, the physical properties of double halide perovskites (DP) were theoretically analyzed using the full-potential linearized augmented plane wave (FPLAPW) approach within the framework of density functional theory (DFT). The generalized gradient approximation (GGA) was utilized to compute key physical properties. The stability of both perovskites was confirmed through volume optimization curves and corresponding formation energies. Furthermore, electronic properties were assessed, and the band gap was determined. The results reveal semiconducting behavior with a direct band gap of 2.6 eV, suggesting its potential for solar cell applications.

Citation

Imane Layaida , FADILA Mezrag , SABER SAAD ESSAOUD , NADIR Bouarissa , ,(2024-11-09), DFT analysis of the physical characteristics of lead-free halide double perovskites.,The 1st International Conference of Materials Engineering and Renewable Energy (I C M E R E 2024),University May 8, 1945 Guelma Algeria Faculty of Science and Technology Department of Mechanical Engineering

Lead-free halide double perovskites have recently drawn significant interest for their promising optoelectronic properties and non-toxic nature. This study conducted a theoretical investigation of their physical properties using the full-potential linearized augmented plane wave (FPLAPW) method within the density functional theory (DFT) framework. The generalized gradient approximation (GGA) was employed to compute essential physical attributes. Stability was confirmed through volume optimization and formation energy calculations. The analysis of electronic properties revealed a direct band gap of 2.6 eV, suggesting semiconducting behavior and strong potential for solar cell applications. Keywords: Double halide perovskites; structural properties; electronic properties.

Citation

FADILA Mezrag , Imane Layaida , ,(2024-11-06), Double-Perovskite Halide Semiconductors for Photovoltaic Use.,The First National Conference on Mechanical Engineering,Univ: Constantine 1- Frères Mentouri University ,Institute of Sciences and Applied Techniques_Department of Mechanics / Department of Electromechanics

The potential of halide perovskites has transformed the field of optoelectronics and energy conversion. In this study, the physical properties of double halide perovskites (DP) were investigated theoretically using the full-potential linearized augmented plane wave (FPLAPW) method within the framework of DFT. The generalized gradient approximation (GGA) was employed to calculate relevant physical characteristics. Stability for both perovskites was verified through volume optimization curves and corresponding formation energies. Additionally, electronic properties were examined, and band-gap were calculated. The findings indicate a semiconducting behavior with a direct band-gap of 2.6 eV, highlighting its potential for solar cell applications.

Citation

Imane Layaida , FADILA Mezrag , SABER SAAD ESSAOUD , NADIR Bouarissa , ,(2024-10-11), Study of the structural and electronic properties of double perovskites for energy applications,JSI'2024 - International Conference on Engineering Sciences 11ème Édition des Journées des Sciences de L’Ingénieur,University of Sfax, National School of Engineers of Sfax (ENIS), Tunisia.

In the zinc-blende phase, spherical II-VI semiconductor nanostructured (MgSe, CdTe, ZnS, ZnSe, and ZnTe) are investigated for the effects of quantum confinement on their energy band gaps. Using the empirical pseudopotential method, the study focuses at the relationship between the network parameter and the quantum dot size and how it impacts the direct and indirect energy band  gaps. The findings demonstrate that, in comparison to what can be observed in bulk materials, quantum confinement leads to a fundamental energy gap that is quite larger. Essentially, this work highlights the impact of quantum confinement on the electronic properties of semiconductor quantum dots and their potential for various technological applications. Keywords: Band gap energy, II-VI semiconductors, Quantum dots.

Citation

FADILA Mezrag , ,(2024-05-07), Energy band Gaps in Nanostructured II-VI Semiconductors: The Effect of Quantum Confinement,2ème colloque nationale de chimie (CNC2@2024) 06 - 07 Mai 2024 SCIENCE AND ENGINEERING,M'sila