FADILA Mezrag

Yahia Fatima Zahra

Étude sur les alliages ternaires semiconducteurs: Masses effectives et distributions de charges.

FERAHTIA Ameur

Calculs pseudopotentiel de l’indice de réfraction et les constantes diélectriques des alliages ternaires semiconducteurs ZnxCd1-xS

Lakhal Lynda

Étude théorique sur la structure de bandes électroniques et ses propriétés dérivées des semiconducteurs nanostructurés

Rahmouni Ameur

Etude des propriétés électroniques et élastiques des alliages ternaires semiconducteurs

Hocini manel

Effet du confinement quantique sur les propriétés électroniques et optiques des matériaux semiconducteurs nanostructurés II-VI

Zakarya, Bouguerra

Effets du confinement quantique sur les propriétés physiques des points quantiques sphériques semi-conducteurs III-V

HENNI, DJAHIDA

Les constantes élastiques et les propriétés mécaniques liées des alliages ternaires semiconducteurs CdSXTe1-X

Baghdadi Wahiba

Structure de bandes électroniques et les propriétés dérivées des quasi-binaires (InSb)1-x(CdTe)x

This study explores the influence of quantum confinement on the energy band gaps of spherical II-VI semiconductor quantum dots in the zinc-blende phase, specifically focusing on MgSe, CdTe, ZnS, ZnSe, and ZnTe. By employing the empirical pseudopotential approach, the research investigates how the size of the quantum dots affects both the direct and indirect energy gaps, and examines their relationship with the network parameter. The results demonstrate that quantum confinement leads to a substantially larger fundamental energy gap compared to that observed in bulk materials. In essence, this study sheds light on the profound impact of quantum confinement on the electronic properties of semiconductor quantum dots, highlighting their potential for various technological applications.

Citation

FADILA Mezrag , ,(2023-10-27), Quantum Confinement Effects on Energy band Gaps in II-VI Semiconductor Quantum Dots: A Study of MgSe, CdTe, ZnS, ZnSe, and ZnTe,10th Internationale conference on computational and experimental science and engineering ICCESEN,ANTALIA TURKEY

In this study, we examine the optical and dielectric properties of ZnxCd1-xS, a ternary alloy system in the zinc-blende crystal structure. To analyze these properties, we employ a pseudopotential model based on the virtual crystal approximation, which takes into account the compositional disorder effect. Through our calculations, we explore various aspects of the refractive index and identify the most suitable model. Additionally, we determine the high-frequency and static dielectric constants for the materials of interest. Our results exhibit a satisfactory agreement with previously published findings in the literature. These findings provide valuable insights for the application of these data in optoelectronics and offer useful information for further studies in this field.

Citation

FADILA Mezrag , ,(2023-10-27), Pseudopotential Analysis of Refractive Index and Dielectric Constants in ZnxCd1-xS semiconductor ternary alloys,10th Internationale conference on computational and experimental science and engineering ICCESEN,ANTALIA TURKEY

Cd-based compounds are crucial semiconductor materials in the II-VI family. The appeal of Cd-based ternary alloys comes from their potential use in solar cells, x-ray detectors, and other electronic devices. Using the empirical pseudopotential approach (EPM) under the virtual crystal approximation (VCA), the electronic and optical characteristics of the CdSxTe1-x semiconductor ternary alloys crystallizing in the Zinc Blende structure are computed. The electronic structure, band gaps and refractive index of the relevant materials have been identified. An analysis and description are given to the effect of composition disorder on the various attributes being studied. For zinc-blende CdSxTe1-x ternary alloys the obtained results are generally in good agreement with those mentioned in the literature

Citation

Khadidja Sassoui , FADILA Mezrag , ,(2023), Empirical pseudopotential approach for CdSxTe1-x ternary alloy semiconductor: Energy gaps and optical properties.,1st International Conference on Materials Sciences and Applications (ICMSA2023),Khenchela, Algeria

II-VI compound semiconductors are characterized by a large energetic band gap. Among these compounds we found the chalcogenides: beryllium telluride (BeTe) and cadmium telluride (CdTe). BeTe are excellent materials for optoelectronic properties [1] and P-type doping and light emitting diodes (LEDs) [2]. On the other hand, CdTe are important materials in solar cells [3]. Using the Empirical Pseudopotential Method (EPM) within the Virtual Crystal Approximation (VCA) we study the electronic band structure, optical and dielectric properties of BexCd1-xTe alloys in the range (0 ≤ x ≤ 1). The diatomic chalcogenides BeTe and CdTe semiconductors crystallize in cubic zincblende structure. Our results show that the band gap progressively increases with increasing Be concentrations in the BexCd1-xTe alloys. Through our results, we found that the gap energy of BexCd1-xTe is direct in the range from 0 to 0.9 and indirect in the range from 0.9 to 1, due to the fact of the direct gap CdTe (Γ-Γ) and the indirect ones Gap BeTe (Γ-X ). The band gap (Γ-Γ) and (Γ-X) varies non-linearly with increasing beryllium concentration in BexCd1-xTe alloys. We were able to calculate the high-frequency dielectric constant and the static dielectric constant by calculating the optical properties, specifically the refractive index, of six different models. These results corresponded to the experimental values. Keywords: II-VI compound semiconductors, EPM, BexCd1-xTe, optoelectronic properties, beryllium telluride.

Citation

Khadidja Sassoui , FADILA Mezrag , ,(2022), Influence of Be concentrations on the electronic, optical and dielectric properties of CdTe compound chalcogenide: empirical pseudopotential method (EPM) approach.,1st NATIONAL ONLINE CONFERENCE IN MATERIALS PHYSICS. CNLPM’22 9 Juin 2022, Eltarf, ALGERIA,Eltarf, ALGERIA

The electronic and optical properties of the ternary alloy system CdSxTe1-x in the zinc-blende structure are investigated. The calculations are performed using a pseudopotential approach (EPM) under the virtual crystal approximation (VCA). The electronic structure, band gaps, refractive index and the high-frequency have been obtained for the materials of interest and the effect of composition disorder on all several features being studied here is examined and discussed. The obtained results for zinc-blende CdSxTe1-x ternary alloys agree generally well with those reported in the literature. Keywords: Pseudopotential method; Electronic structure; Optical properties; CdSxTe1-x alloys

Citation

Khadidja Sassoui , FADILA Mezrag , ,(2022), The disorder effect on electronic and optical properties of CdSxTe1-x ternary semiconductor alloys,International Conference on Energy and Material Sciences November 16 - 17, 2022 Skikda, Algeria,Skikda, Algeria

The energy band structure and optical properties of the ternary alloy semiconductor ZnxCd1-xS in the zinc-blende structure have been studied. The computations were performed using a pseudopotential model, within the virtual crystal approximation. The calculations show the influence of the compositional disorder on the energy band structure and the optical properties such as refractive index and dielectric constant. The refractive index has a number of aspects, and the best model for it, has been chosen after discussion of these features. There is good agreement between our findings and those in the literature. The new findings should offer helpful details on how to utilize this knowledge in optoelectronics.

Citation

FADILA Mezrag , ,(2022), THE EFFECT OF COMPOSITIONAL DISORDER ON ZnXCd1-XS ENERGY BAND STRUCTURE AND OPTICAL PROPERTIES Bouarissa Nadir 2022,The 2nd World Energy Storage Conference,Istanbul, Turkiye December 18-21, 2022

The quantum effects at the nano-metric level have been observed in a variety of confined structures, particularly in semiconductor quantum dots. In this contribution, the electronic and optical properties of GaSb spherical semiconductor quantum dots are investigated. For the calculations, the pseudo potential approach was employed. The size dependence of the energy gaps at Г, X and L points, the effective masses of electrons and heavy-holes, the refractive index, and the dielectric function for a studied GaSb spherical quantum dot are analyzed and discussed. When the degree of quantum confinement effect was changed by decreasing the radius of the spherical quantum dots, a striking charge in comparison to the bulk values has been obtained. Our results indicate that as the quantum dot radius is raised, most of properties rapidly decrease. This demonstrates an improvement in the mobility of the material. However, the refractive index and the dielectric constant are increased with increasing the radius of the nano-crystal.

Citation

Lynda LAKHAL , FADILA Mezrag , , (2022), Gallium Antimonide Spherical Semiconductor Quantum Dots, ECS Journal of Solid State Science and Technol., Vol:11, Issue:, pages:103007, IOP Science

The influence of compositional disorder on ZnxCd1−xS energy band gaps and carrier effective masses has been investigated. The calculations are performed using a pseudopotential approach under the virtual crystal approximation (VCA). A correction to the VCA has been introduced so as to take into consideration the disorder effect. Our results show that the theoretical model used in the present contribution should include the disorder effect in order to describe more accurately the fundamental band gap bowing parameter of the experimental dependence. However, the disorder effect upon electron, light-hole and heavy-hole effective masses in the material system of interest is shown to be weak. Moreover, the trend of the conduction Г, X and L valleys and the nature of the optical fundamental band gap are found to be weakly altered by the alloy disorder. The different photo-catalytic activity of wurtzite and zinc-blende CdS is discussed for a new understanding.

Citation

FADILA Mezrag , Turki-Kamoun Najoua, , (2021), Disorder effect upon energy band gaps and carrier effective masses of ZnxCd1−xS, European Physical Journal Plus, Vol:136, Issue:, pages:724, Springer

The influence of compositional disorder on ZnxCd1−xS energy band gaps and carrier effective masses has been investigated. The calculations are performed using a pseudopotential approach under the virtual crystal approximation (VCA). A correction to the VCA has been introduced so as to take into consideration the disorder effect. Our results show that the theoretical model used in the present contribution should include the disorder effect in order to describe more accurately the fundamental band gap bowing parameter of the experimental dependence. However, the disorder effect upon electron, light-hole and heavy-hole effective masses in the material system of interest is shown to be weak. Moreover, the trend of the conduction Г, X and L valleys and the nature of the optical fundamental band gap are found to be weakly altered by the alloy disorder. The different photo-catalytic activity of wurtzite and zinc-blende CdS is discussed for a new understanding.

Citation

FADILA Mezrag , ADMIN Admin , Turki-Kamoun, Najoua, , (2021), Disorder effect upon energy band gaps and carrier effective masses of ZnxCd1− xS., THE EUROPEAN PHYSICAL JOURNAL PLUS, Vol:136, Issue:7, pages:690, Springer Link

The effect of alloy disorder on direct and indirect band gap energies in CdS x Te1−x semiconducting alloys has been investigated. The calculations are performed using a pseudopotential approach within the virtual crystal approximation (VCA). In the simplest approximation based on the VCA, the fundamental band gap bowing of CdS x Te1−x is found to be in disagreement with that of the experiment. The value of this bowing is highly improved by taking into account the compositional disorder effect (i.e. going beyond the VCA).

Citation

FADILA Mezrag , ADMIN Admin , Fares Nour EL Houda, , (2020), The band gap bowing of CdSxTe1-x alloys beyond the virtual crystal approximation, Emerg. Mater. Res., Vol:9, Issue:, pages:1056, icevirtuallibrary.com

Using a pseudopotential approach, the present study focuses on the effects of quantum confinement on physical properties of zinc-blende ZnTe spherical quantum dots. The size dependence of all features being considered here has been analyzed and discussed. Our results show that the effects of quantum confinement change the physical properties of nanostructured ZnTe dramatically relative to the bulk values. This provided with the possibility for obtaining new physical properties that was not provided by the bulk material.

Citation

FADILA Mezrag , Lynda LAKHAL , , (2020), Quantum confinement effects on physical properties of ZnTe spherical quantum dots, . Lakhal, L., Mezrag, F., Bouarissa, N. Acta Phys. Pol. A (2020), Vol:137, Issue:4, pages:451, icm.edu.p

Based on a pseudopotential approach under the virtual crystal approximation, the electronic properties, namely the electronic band structure, direct and indirect energy band gaps, valence band width, and antisymmetric band gap of AlxGa1−xNyAs1−y, lattice, matched to GaAs, have been investigated. A detailed comparison is made between our results and previously reported data, wherever possible. In other cases our results are predictions. Our findings show that by varying x and/or y, diverse values can be obtained for the electronic parameters of interest.

Citation

FADILA Mezrag , ADMIN Admin , ADMIN Admin , Fares Fahima, Fares Nour EL Houda, , (2020), Electronic properties of AlxGa1-xNyAs1-y quaternary semiconducting alloys lattice matched to GaAs, Acta Phys. Pol. A, Vol:137, Issue:, pages:489-492, ICM EDU

We present a theoretical study on electronic structure and chemical trends of zinc-blende GaP under compression up to 100 kbar obtained from a pseudopotential approach calculations. The influence of high pressure on the features of interest has been examined and reported. The dynamics of chemical bonds in the compound in question is investigated by analyzing the profiles of the electron charge densities. Our findings show generally a good accord with experiment. The present study can contribute in the understanding of the pressure effects on the electronic properties and chemical bonding of GaP material

Citation

FADILA Mezrag , , (2020), Band structure and chemical bonding of GaP: pressure-induced effects, Phase Transitions 93, Vol:973, Issue:10, pages:973-980, TAYLOR FRANCIS

The effect of alloy disorder on direct and indirect band-gap energies in CdSxTe1-x semiconducting alloys has been investigated. The calculations are performed using a pseudopotential approach within the virtual crystal approximation (VCA). In the simplest approximation based on the VCA, the fundamental band-gap bowing of CdSxTe1-x is found to be in disagreement with that of experiment. The value of this bowing is highly improved by taking into account the compositional disorder effect (i.e. going beyond the VCA). This will improve significantly the electronic structure and band parameters of CdSxTe1-x alloy system.

Citation

FADILA Mezrag , ,(2019), The band-gap bowing of CdSxTe1-x alloys beyond the virtual crystal approximation,6th International Conference on Computational and Experimental Science and Engineering (ICCESEN 2019,Kemer Antaliya turquieIccesen-2019 (23-27) October