IDRIS Bouchama

SALMI Dhayaa elheq , BELHOUT Kheir eddine, MOUSSAOUI Walid

Dispositif multi-capteurs pour réduire les risques domotiques

Rafik ZOUACHE

Theoretical and experimental study of defects for Cu(In,Ga)Se2 absorbers

This investigation undertakes a comprehensive exploration into the inherent structural, elastic, and mechanical attributes exhibited by ZnX compounds, with a specific focus on instances where X corresponds to O, Te, and S. Employing the robust framework of density functional theory (DFT) in conjunction with the CASTEP software, this study employs the Local Density Approximation (GGA) to meticulously scrutinize the cross-correlation function. The computational outcomes encompass a thorough analysis of lattice modulus and mechanical elasticity traits, which are meticulously validated against empirical observations and theoretical predictions. These findings collectively underscore the tantalizing potential of ZnX compounds (where X embodies O, Te, and S) within the realm of optoelectronic applications, notably encompassing solar cell technologies, as a result of their intrinsically favorable attributes. Furthermore, the integration of intricate insights concerning elastic and mechanical properties offers an enriched comprehension of the applicability of these compounds, particularly in the context of flexible solar cell advancements. The prowess of the CASTEP program as an indispensable tool for attribute estimation is notably evident through the application of GGA-based cross-correlation function calculations. The amalgamation of theoretical insights and computational advancements achieved in this study contributes substantively to the expanding domain of materials science. In conclusion, this work serves as a pivotal stepping stone towards refining material design strategies for cutting-edge optoelectronic devices, thereby paving the way for innovation and advancement in this technologically pivotal field. Keywords: ZnX compounds; Structural properties; Elastic properties; Mechanical properties; Density functional theory (DFT); CASTEP software; Local Density Approximation (GGA); Lattice modulus;

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Idris BOUCHAMA , MohamedAmine GHEBOULI , Chihi tayeb, ,(2023-12-13), Enhancing ZnX (X = O, Te, S) Compound Properties via LDA Approach and CASTP Program: Computational Investigation of Structural, Elastic, and Mechanical Aspects,Enhancing ZnX (X = O, Te, S) Compound Properties via LDA Approach and CASTP Program: Computational Investigation of Structural, Elastic, and Mechanical Aspects,Laghouat, Algeria

This study demonstrates the utility of SILVACO/Atlas in modeling CIGS solar cells to optimize design and fabrication parameters, such as layer thicknesses, doping concentrations, and material defects. By analyzing different designs and configurations, we can identify the most efficient and cost-effective solar cell structures. Our calculations specifically focused on three heterojunction solar cell structures (substrate, tandem and triple-junction), and we used 2D SILVACO/Atlas simulator to analyze their performance under various conditions. By varying factors such as thicknesses, carrier concentration, defect density and operating temperature, we were able to extract photovoltaic parameters and investigate the impact on the overall performance of the cells. The use of SILVACO/Atlas in our research highlights its powerful role in the development of high-performance solar energy technologies.

Citation

Idris BOUCHAMA , Rafik Zouache, Saidani Okba, Elyazid Zaidi, Abderahim Yousfi, Zitouni Messai, ,(2023-11-22), Enhancing Efficiency In CIGS solar cell through numerical analysis by inserted uc-Si:H BSF layer,1st edition of International conference on Electrics Engineering and Telecommunications (2ETA-2023),Bordj Bou-Arreridj University

Structural, elastic, mechanical and electronic properties of pure and zinc-doped SrTiO3 at the concentration in the range (1–10%) are studied by ¯rst-principles calculations. The structural parameters of synthesized compounds agree well with the standard data depicting the growth of stable compounds. A slight obvious increase in the lattice constant of 3.9245 Å is observed in Zndoped SrTiO3 due to the deviation of the atomic radii of Zn and Ti. Elastic constants and mechanical parameters of SrTiO3 are closer to their available theoretical and experimental data. The investigated compounds exhibit brittle behavior for all Zn ratios. The doping zinc concentration reduces the indirect band gap value. The doping concentration 2%, gives a band gap value closer to the experimental one. The band gap of pure SrTiO3 is 1.827 eV and after doping with Zn for concentration from 1% to 10%, the optimized values are 1.970, 1.886, 1.802, 1.718, 1.635, 1.552, 1.470, 1.389, 1.310, 1.231 and 1.154 eV.

Citation

Idris BOUCHAMA , faiza BENLAKHDAR, Mohamed amine Ghebouli, zohra zerrogui, karim Boufrach, Brahim Ghebouli, Tayeb Chihi, Soltan alomairi, , (2023-11-08), Structural, elastic, mechanical and optoelectronic properties of zinc-doped SrTiO3 perovskite compounds, Modern Physics Letters B, Vol:38, Issue:1, pages:2350200, World Scientific

Zinc monochalcogenides, specifically ZnS serve as exemplary representatives of II-VI semiconductors and have the ability to adopt either zinc-blende (ZnX-z) or wurtzite (ZnX-w) crystal structures. Notably, ZnX-z phases exhibit optical isotropy, while ZnX-w phases display anisotropy, with the c-axis serving as the polar axis. ZnS featuring a wide direct band gap of approximately 3.37 eV at room temperature, emerges as a quintessential semiconductor employed extensively in optoelectronic applications. Furthermore, ZnS exhibits transparency within the visible light spectrum and possesses the added advantage of environmental friendliness, attributed to the abundant presence of zinc in the Earth's crust. Among the family of IIB-VIA compounds, namely ZnS, this material crystallizes in the cubic zinc-blende structure under ambient pressure, boasting direct energy band gaps. Notably, these wide band-gap semiconductors are of paramount interest due to their capability to emit light even at room temperature. Utilizing computational tools such as CASTEP offers a robust means for designing and enhancing these materials, facilitating the development of advanced optoelectronic devices. In this study, we delved into the electronic structure and optical characteristics of ZnS systems, employing first principles through the ultra-smooth pseudopotential approach of density functional theory and the generalized gradient approximation method implemented with CASTEP. Our investigation yielded the following findings: The network parameters exhibited varying values, making it feasible to deposit these materials on different substrates. The binary alloy holds particular interest due to its wide bandgap 2.698 eV for ZnS. The results obtained for the structural, physical, and optical properties closely align with existing theoretical and experimental data, affirming the accuracy of our calculation methodology. The properties of pure ZnS materials suggest significant potential for use in solar cells.

Citation

Idris BOUCHAMA , benlakhdar faiza, Tayeb chihi, Mohamed Amine Ghebouli, Ibrahim Ghebouli, ,(2023-10-10), Comprehensive investigation of ZnS: Structural properties, Elastic constants and their crucial role in environmental protection and clean energy production,The second International conference of nanotechnology for environmental protection and clean energy production ICNEP-2023,Freres Mentouri University - Constantine I

Zinc monochalcogenides, specifically ZnS serve as exemplary representatives of II-VI semiconductors and have the ability to adopt either zinc-blende (ZnX-z) or wurtzite (ZnX-w) crystal structures. Notably, ZnX-z phases exhibit optical isotropy, while ZnX-w phases display anisotropy, with the c-axis serving as the polar axis. ZnS featuring a wide direct band gap of approximately 3.37 eV at room temperature, emerges as a quintessential semiconductor employed extensively in optoelectronic applications. Furthermore, ZnS exhibits transparency within the visible light spectrum and possesses the added advantage of environmental friendliness, attributed to the abundant presence of zinc in the Earth's crust. Among the family of IIB-VIA compounds, namely ZnS, this material crystallizes in the cubic zinc-blende structure under ambient pressure, boasting direct energy band gaps. Notably, these wide band-gap semiconductors are of paramount interest due to their capability to emit light even at room temperature. Utilizing computational tools such as CASTEP offers a robust means for designing and enhancing these materials, facilitating the development of advanced optoelectronic devices. In this study, we delved into the electronic structure and optical characteristics of ZnS systems, employing first principles through the ultra-smooth pseudopotential approach of density functional theory and the generalized gradient approximation method implemented with CASTEP. Our investigation yielded the following findings: The network parameters exhibited varying values, making it feasible to deposit these materials on different substrates. The binary alloy holds particular interest due to its wide bandgap 2.698 eV for ZnS. The results obtained for the structural, physical, and optical properties closely align with existing theoretical and experimental data, affirming the accuracy of our calculation methodology. The properties of pure ZnS materials suggest significant potential for use in solar cells.

Citation

Idris BOUCHAMA , benlakhdar faiza, Tayeb chihi, Mohamed Amine Ghebouli, Ibrahim Ghebouli, ,(2023-10-10), Comprehensive investigation of ZnS: Structural properties, Elastic constants and their crucial role in environmental protection and clean energy production,The second International conference of nanotechnology for environmental protection and clean energy production ICNEP-2023,Freres Mentouri University - Constantine I

This study used the DFT method to investigate the structure, electronic and optoelectronic properties of ZnS1-xOx system. The anisotropic optical parameters, the band gap range from 2.5 eV to 3.6 eV and absorption of extreme ultraviolet light make ZnS1-xOx alloy as windows, lenses and absorber material. The refractive index is more important when photons move through the material and when bonds between atoms are covalent. The static refractive index decreases from 2.1 to 1.5 when the oxygen content x passes from 0 to 1. The in-plane and out-of-plane extinction coefficient start at energy identical of that corresponding to the direct band gap value of ZnS1-xOx alloy. ZnS1-xOx absorb ultraviolet light in the range 4 eV to 10 eV and the band gap validate its candidature for optical and photovoltaic devices. The similar profile of Zn d and O p throughout the whole energy region indicates the presence of hybridization between their electrons and a covalent bonding between them. The absorption coefficient of ZnS1-xOx system is in the range of 105 cm-1, which is a characteristic property of a good absorber material.

Citation

Idris BOUCHAMA , benlakhdar faiza, ,(2023-09-26), Comprehensive Investigation of Structural and Electronic Properties of Sulfur-Doped Zinc Oxide using CASTEP Program,3rd International Conference on Innovative Academic Studies,Konya/Turkey

This work presents a comprehensive study on the effects of Galium doping in the CuInS2 compound highlights substantial improvements in its structural, mechanical, electronic, and optical properties. The observed increases in the elastic constants (B, G, and Y) indicate enhanced mechanical strength and stability, making the doped material more resilient. Additionally, the augmentation in the energy gap and absorbance demonstrates a favorable modification in the electronic band structure, leading to higher light absorption capabilities. Moreover, the rise in the dielectric constant signifies enhanced electrical response and polarization behavior, offering potential advantages in electronic applications. The overall findings of this study indicate that aluminum doping is a promising strategy to tailor and optimize the properties of CIGS, making it an attractive candidate for a wide range of advanced technological devices and applications.

Citation

Idris BOUCHAMA , Benlakhdar faiza, Tayab Chihi, Brahim ghebouli, zohra zerrougui, ,(2023-07-10), Advancing the Properties of CuInX-1GaXS2 Compounds using the CASTEP Program: A Computational Exploration of Structural, Electronic, and Optical Characteristics,5th International Conference on Applied Engineering and Natural Sciences,Konya/Turkey

The purpose of this research is to investigate the structural, electronic, and optical properties of ZnX compounds, particularly those with X = Te, S, and O, which have direct bandgaps that make them optically active. To gain a better understanding of these compounds and their related properties, we conducted detailed calculations using density functional theory (DFT) and the CASTEP program, which uses the generalized gradient approximation (GGA) to estimate the cross-correlation function. Our results for lattice modulus, energy bandgap, and optical parameters are consistent with both experimental data and theoretical predictions. The energy bandgap for all compounds is relatively large due to an increase in s-states in the valence band. Our findings suggest that the optical transition between (O - S - Te) - p states in the highest valence band and (Zn - S - O) - s states in the lowest conduction band is shifted to the lower energy band. Therefore, ZnX compounds (X = Te, S and O) are a promising option for optoelectronic device applications, such as solar cell materials.

Citation

Idris BOUCHAMA , Faiza Benlakhdar, Tayeb chihi, Brahim ghebouli, mohamed amine ghebouli, zohra zerroughi, khettab khatir, mohamed alam said, , (2023-07-06), AB-INITIO STUDY OF STRUCTURAL, ELECTRONIC AND OPTICAL PROPERTIES OF ZnX (X = Te, S and O): APPLICATION TO PHOTOVOLTAIC SOLAR CELLS†, EAST EUROPEAN JOURNAL OF PHYSICS, Vol:3, Issue:1, pages:413, EAST EUROPEAN JOURNAL OF PHYSICS

This study focuses on investigating how changes in temperature afect the sensitivities of an optical sensor that uses a SiO2:TiO2 planar waveguide, with particular emphasis on the fundamental modes sensitivities. The results showed that, by accurately determining the appropriate core thickness for each set of physical parameters of the waveguide, we not only increased the sensitivity, but also extended its stabilization range with respect to the temperature. The best results, in terms of values and stabilities of the sensitivities were obtained for a high refractive index of the core and selecting a measurand refractive index closest to that of substrate. As regards the geometrical parameters, the most favorable results can be attained for the core thicknesses located between the thickness corresponding to the maximum sensitivity at room temperature and the cut-of thickness of the TM0 mode, the sensitivity remain relatively stable at the vicinity of 0.41. However, for the monomode structure, the best results can be achieved for the core thicknesses situated between the thickness corresponding to the maximum sensitivity at room temperature and twice the cut-of thickness of the TE0 single mode, the average sensitivity is relatively constant at around 0.35.

Citation

Idris BOUCHAMA , · Salim Benaissa, · Abdelhalim Bencheikh, Abdelbaki Cherouana, , (2023-02-21), Optimization of waveguide parameters for minimization of the sensitivity temperature dependence for the SiO2:TiO2 planar waveguide optical sensor, Optical and Quantum Electronics, Vol:55, Issue:1, pages:1031, Springer